PART |
Description |
Maker |
BB302MBW-TL-E BB302M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB504C |
Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB305M BB305MEW-TL-E |
Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB100211 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1005 TBB1005EMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1012MMTL-H TBB101211 |
Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB101006 TBB1010KMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB501M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
BB102M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
BB101C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
BB503M BB503 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
|